About The Event

Precise determination of crystallographic orientation is important for the characterization and processing of single crystals and semiconductor wafers. X-ray diffraction provides a fast and non-destructive method for determining crystal orientation with high precision and can be applied to a wide range of crystalline materials and sample configurations. The Malvern Panalytical crystal orientation portfolio provides X-ray diffraction solutions for the analysis of bulk crystals, wafers, and more complex structures, addressing different measurement requirements across materials research and semiconductor processing. Depending on the application, parameters such as offcut magnitude and direction, reference orientation, and the relative orientation of crystalline layers can be determined. Selected examples from SiC wafers and wafer-bonded piezoelectric-on-insulator (POI) structures demonstrate these measurement capabilities. In bonded structures, the crystallographic orientations of the individual layers and their relative in-plane twist can be determined independently, providing valuable information for process development and quality control.